| PART |
Description |
Maker |
| UPC3245TB |
SiGe BiCMOS Integrated Circuit
|
Renesas
|
| UPC3245TB-E3 UPC3245TB-E3-A |
SiGe BiCMOS Integrated Circuit Wideband Amplifier IC with 3-Step Gain Selection
|
Renesas Electronics Corporation
|
| UPC8233TK UPC8233TK-E2 UPC8233TK-E2-A |
BIPOLAR ANALOG INTEGRATED CIRCUIT SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
|
California Eastern Labs
|
| NTE955MC NTE955 |
Integrated Circuit CMOS Timing Circuit
|
NTE[NTE Electronics]
|
| TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V8512J-15 TC55V8512J-12 TC55V8512FT-15 TC55V85 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
From old datasheet system
(TC55V8512J/FT) 8-Bit CMOS SRAM
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58DVM92A1FT00 TC58DVM92A1FT |
Flash - NAND
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| NTE1759 |
2.5-V Integrated Reference Circuit 3-TO-92 0 to 70
Integrated Circuit PMOS, 26 Command TV Remote Control Reciever
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
